| PART |
Description |
Maker |
| APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| STTH312B -STTH312B |
Ultrafast recovery - 1200 V diode
3 A, 1200 V, SILICON, RECTIFIER DIODE
|
STMICROELECTRONICS
|
| CD411230 CD411630 |
Dual Diode 30 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK Modules(30 Amperes/1200-1600 Volts) 30 A, 1200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM1200HA-24J |
Single IGBTMOD?H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD⑩ H-Series Module 1200 Amperes/1200 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| X37120B1N1 |
Single Phase Bridge; Package: SEE_FACTORY; IO/ Leg (A): 80; VR / Leg (V): 1200; IFSM / Leg (A): 1500; 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
|
| APT2X31DQ120J APT2X30DQ120J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 1200; trr (nsec): 25; VF (V): 2.6; Qrr (nC): 1800; 30 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG |
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 1200; trr (nsec): 30; VF (V): 2.8; Qrr (nC): 2800; 60 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
|
